EX-99.3 4 u53770exv99w3.htm EX-99.3 exv99w3
 

Exhibit 99.3

Deutsche Bank 2007 Technology Conference London Franki D'Hoore Director Investor Relations 14 September, 2007


 

Safe Harbor "Safe Harbor" Statement under the U.S. Private Securities Litigation Reform Act of 1995: the matters discussed in this document may include forward-looking statements that are subject to risks and uncertainties including, but not limited to: economic conditions, product demand and semiconductor equipment industry capacity, worldwide demand and manufacturing capacity utilization for semiconductors (the principal product of our customer base), competitive products and pricing, manufacturing efficiencies, new product development, ability to enforce patents, the outcome of intellectual property litigation, availability of raw materials and critical manufacturing equipment, trade environment, and other risks indicated in the risk factors included in ASML's Annual Report on Form 20-F and other filings with the U.S. Securities and Exchange Commission.


 

ASML overview - The world's leading provider of lithography systems for the semiconductor industry Established: 1984 Headquarters: Veldhoven, the Netherlands Market cap ~ €10 B Employees ~ 6,200 Customers: Serving 17 of the top 20 semi mfg. Equity Listing: Nasdaq and Euronext Key facts Key financials € million 2005 2006 H1 2007 Market share (based on revenue) 57% 63% 66% Net sales 2,529 3,597 1895 Gross profit 974 1,462 777 EBIT 449 871 405 Leaders in Innovation ASML TWINSCAN Ranked in the top 3 for customer satisfaction for the 5th consecutive year


 

Sources: ASML MCC, VLSI Research, iSuppli, SIA Industry growth drives Lithography tool consumption - NAND Flash fastest growing DRAM LOGIC NAND NOR ANALOG MICRO Other 0 10 20 30 40 50 60 0 5 10 15 20 25 30 CAGR Exposure Area 06-09 [%] Exposure area 2006 [SI*10^9] Segment size: 20 Bio. US$


 

NAND Flash Customer Roadmaps drive Lithograph tool development Jan-00 Jan-02 Jan-04 Jan-06 Jan-08 Jan-10 Jan-12 Half Pitch (nm) 200 100 80 60 40 Logic DRAM Half Pitch status : Logic = 65~90nm DRAM = 60~80nm NAND = 55~65nm


 

ASML Lithography Roadmap 300mm


 

ASML TWINSCAN? Product Specifications Continuous Improvement


 

ASML roadmap enables shrink for Logic, DRAM, and NAND flash at time required Source: Various customers, dates determine production start/qualification 10 12 200 100 80 60 40 11 07 09 08 04 06 05 01 03 02 00 Resolution/half pitch "Shrink" [nm] Year ASML Product Introduction XT:1400 XT:1700i AT:1200 AT:850 XT:1900i k1=0.4 k1=0.27 Logic DRAM R&D R&D NAND XT:1450 Double Patterning


 

84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 00 01 02 03 04 05 06 Region 1 0 1 2.5 8.5 7.5 10.5 11.5 10.5 21 21 19 19.5 25.5 31 36 41 41 30 54 45 53 56.5 63 Technology in Time helps grow market share Technology in Time helps grow market share Technology in Time helps grow market share Total market: €4,800 million Total market: €463 million ASML market share (revenue) - Nearly tripled in 10 years 1984 2006 Perkin Elmer Canon GCA Ultratech Eaton Nikon ASET Hitachi 1984 4 2 37 12 5 35 2 3 ASML Nikon Canon 63 21 16 Source: SEMI, Gartner Dataquest 8" & i-line 8" & i-line 6" & early i-line KrF & Step & Scan 12" & ArF Immersion


 

KrF ArF dry ArF wet I line East 15 37 42 6 West North Immersion - Leadership continues Over 50 systems shipped to date to all applications and geographies in the world 25 immersion machines in backlog valued at € 728 M Received repeat orders from major Japanese customers including multiple XT:1900i machines ASML plans to ship about 35 immersion machines in 2007 Backlog in value i-line 6% KrF 15% ArF dry 37 % ArF Immersion is 42% of backlog


 

First TWINSCAN XT:1900i shipped on schedule early July First tool in the world capable of printing features below 40 nm in volume production in volume production in volume production


 

Over 2 Million wafers processed on ASML immersion systems with steep production ramp since April 2007 systems with steep production ramp since April 2007 systems with steep production ramp since April 2007 Wafers exposed on ASML immersion equipment


 

180nm 130nm 90nm 65nm The layout designers draw, is not quite what gets printed by scanners


 

Why is this happening? Because the litho process is not an error-free transfer function Mask-writing Wafer exposure Resist development Etch H ^ 1


 

What can we do about it? Software compensation for the distortion H ... ... ... ~1/H


 

Mask (with correction, or "RET/OPC") Silicon Image w/o correction Design Layout Mask (no correction) Silicon Image with RET/OPC In practice...


 

What does Brion do? Mask-writing Wafer exposure Resist development Etch H ^ 1 Accurate mathematical model of "H" Designers drawing Simulated wafer, before you print anything


 

With an accurate mathematical model of H, we can do two things: Compensate on design Compensate on scanner i.e. Approximate 1/H i.e. Find H' so distortion is less and/or easier to compensate for Brion's Tachyon OPC+ product line Scanner tuning


 

Through accurate model, we can fine tune many system settings for optimum exposure of each device pattern, reticle & wafer Lens Illuminator Sigma Pupicom PSEs DOEs Dose Unicom Etc. Stages Laser Bandwidth NA Manipulators Focus Tilt X Tilt Y Reticle height Synchronization


 

Synergies of owning the scanner and the litho model for scanner-tuning System setting ranges : NA range Illumination option/ranges standard & custom DoseMapper correction range etc. Actual system data Lens heating characteristics Aberration data Stray light Laser bandwidth etc. Wafer metrology & exposure data: Focus & Leveling & focus hot spot data Dose error, Laser data etc. Optimum system settings : NA Illumination setting (standard, custom) Focus, Dose settings etc. Real time system optimisation : Lens manipulator settings Exposure dose & DoseMapper offsets Focus & tilt by shot / wafer Laser bandwidth Alignment & wafer grid offsets / field/wafer Other


 

The holy-grail of optimisation: today, only ASML can do this Optimized Scanner (e.g. Illumination) Non - Optimized Mask Top-down photoresist Optimize both the scanner and the mask, together, as a unified optimization problem


 

With Brion, ASML now can... (1/2) Leverage a whole new dimension of possibilities for optimizing imaging performance (mask optimization, RET/OPC) as an integral part of its solution package Use an accurate model of the lithography process to tune the dozens of scanner knobs available so to further optimize imaging performance (scanner tuning) Through the two points above, enable faster shrink and higher yield for our customers


 

With Brion, ASML now can... (2/2) Further secure the ArF roadmap until EUV is ready Prevent value-migration to EDA by capturing software solutions to printability Penetrate a new and growing market at the interface with EDA, capturing new value streams and enabling growth beyond "hardware"


 

1 10 100 1985 1990 1995 2000 2005 2010 Year Lithography System costs will continue to rise Relative List Price i-line 300mm 200mm 150mm KrF ArF ArFi EUV? Wafer Size Wavelength Stepper Platform Step & Scan Dual Stage 0.4 0.5 0.6 0.7 0.8 0.93 1.2 1.35 Aperture


 

Average Selling Price (ASP) grows 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 3.59 4.38 5.4 5.9 6.8 8.92 9.46 9.28 13.54 14.01 MSGraph.Chart.8 MSGraph.Chart.8 ASML ASP new systems KrF & Step & Scan 300mm & ArF 300mm & ArF ArF volume & ArFi


 

Are lithography systems becoming unaffordable? 1 10 100 1,000 10,000 1986 1988 1990 1992 1994 1996 1998 2000 2002 2004 2006 2008 150mm 200mm 300mm Relative price increase = 40% / generation Relative productivity increase (mm2/hour) = 30% / generation Relative shrink increase (pixels/field) = 100% / generation Relative cost reduction (pixels/hour/MEuro) = 60% / generation


 

Lithography Affordability for Future Shrink Relative Performance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2.0 AT:1150C XT:1400E XT:1900i NEXTi EUVL 90nm 65nm 40nm 28* 22 2003 2005 2007 2009 2011 4GB 8GB 16GB 32GB 64GB Relative System Cost Relative System WPH Relative Cost / Function / Hour Model Resolution Year NAND Flash 2.6 2.2 2.4 * Double Patterning


 

ASML Competitive Advantage 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2004 2005 2006 2007 2008 ASML ArF Competition ArF ASML ArFi Competition ArFi Pixels per Hour per Million Euro


 

Summary Shrinking design rules have been the economical driver of the IC industry. Lithography remains the key enabler Providing the right product at the right time allows market share gains for ASML Shrinking design rules require increasingly more sophisticated lithography systems resulting in a steady growth in their cost and resulting ASP's ASML insures that the increasing cost of advanced lithography systems remain acceptable by developing solutions that result in maximum usable shrink while driving increased productivity to ensure steady improvement in cost per function Future lithography technologies will likely ensure that the economics of shrink will remain attractive for at least several more generations


 

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