EX-99 5 asml.txt EXHIBIT 99.3 Exhibit 99.3 A Closer Look at ASML: presentation to analysts Slide 1 Picture omitted A CLOSER LOOK AT ASML September 26-27, 2002 ASML SLIDE 2 Picture omitted TWINSCAN SLIDE 3 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 4 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 5 Graph omitted Moore's law Cost per bit (DRAM) o Cost reduction o Bits: Factor of 10 in 3.5 year o Die: Factor 3.15 in 3.5 year o Moore's law: Cost o Moore's law: Output o Moore's law: Shrink SLIDE 6 Graph omitted 300mm Output vs Cost o Productivity and capital investment are main components in CoO control o Similar wafer throughput needed for 300mm as on 200mm for significant cost reduction SLIDE 7 Customer requirements at 300 mm o Don't you also need: maximum Yield o Accurate alignment information to improve overlay? o Better focus & leveling to maximize edge die yield? o Imaging performance to enable higher resolutions? SLIDE 8 Graph omitted Shrink Res. (halfpitch, nm) Overlay (nm) UDoF (nm) SLIDE 9 Customer requirements at 300 mm o End o Availability of technology at the right time o Reliable production solution o Extendibility SLIDE 10 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 11 ASML Twinscan Product Introduction o Twinscan, platform introduced in 2000 as single stage o First system 150nm resolution o Single stage systems used as early learning for external interfaces and general platform performance o Twinscan, dual stage, modular design platform introduced in 2001 o First dual stage application o Productivity o Accuracy o First product 130nm, design ready for <70nm o Easy new product introduction o Fast ramp-up of new technology SLIDE 12 Graph omitted ASML 300mm Dual stage Product Roadmap SLIDE 13 Graph omitted Number of planned 300mm fabs Number of new fabs Twinscan introduction Dual stage introduction ASML twinscan ready before 300mm fab ramp up SLIDE 14 Photograph omitted High NA ArF Projection Lens SLIDE 15 Graph omitted ASML 300mm Product Roadmap AT: . . . HIGH NAF 2 MS VII NA=0.75 AT:1100 NA=0.75 AT:850 NA=0.80 AT:750 NA=0.70 AT:400 NA=0.65 SLIDE 16 Tool Introduction MSVII ATT: . . o Q2 2003 o 2004 o Full Field tool o Production tool for 70nm node Process Development for early 157nm learning Pictures omitted SLIDE 17 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 18 Twinscan dual stage technology Better/Faster/Smaller o BETTER technology leads to higher yield o World class imaging, productivity and overlay o FASTER systems reduce cost per die o More die/300mm-wafer reduces overhead per die o SMALLER features reduce cost per function o Improved resolution and alignment o OVERALL more good die per day SLIDE 19 Introducing a Second Wafer Stage o Throughput is increased significantly o Taking overhead activities out of the critical path o Metrology position for overhead activities and accuracy o Wafer loading and unloading o Leveling and alignment data collection o Exposure position for high throughput o Continuous wafer exposure using pre-collected and processed data from the metrology position SLIDE 20 Graph omitted Dual Stage Productivity Advantage 0 Seconds 60 Seconds Single Stage Cycle 57 Seconds = 63 wph 26 Sec. 15 Sec. 16 Sec. Dual Stage Cycle Metrology Operation 32 Sec. 36 Seconds = 100 wph Exposure Operation 5 Sec. 15 Sec. 16 Sec. 6X More Alignment Data + Full Wafer Height Map SLIDE 21 Graph omitted Dual Stage Metrology Advantage 0 Seconds 60 Seconds Single Stage Cycle 30 Seconds = 120 wph 4 Sec. 13 Sec. 13 Sec. No time for metrology Dual Stage Cycle Metrology Operation 28 Sec. 30 Seconds = 120 wph Exposure Operation 4 Sec. 13 Sec. 13 Sec. 6X More Alignment Data + Full Wafer Height Map SLIDE 22 Throughput ASML Twinscan AT:1100B o Which throughput number would you like [wafers/hour]

Industry average tpt conditions Scanspeed 320 mm/sec Up to 25 alignment markers Twinscan ~40% faster than single stage system SLIDE 23 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 24 Diagram omitted TWINSCAN AT:1100B (ArF) - Imaging without RET Binary Mask NA = 0.75, (sigma)o = 0.85, (sigma)i = 0.55 100 nm 300 nm TOK TArF 6063 resist E: 23.6 mJ/cm2 81 nm AR19 with 52 nm AQ6 Focus <-------------------------- -----------------------------> 0.6 (mu)m Binary Mask NA = 0.75, (sigma)o= 0.89, (sigma)i = 0.65 90 nm 255 nm TOK TArF 6063 resist E: 24 mJ/cm2 81 nm AR19 with 52 nm AQ6 K1 = 0.35 Focus <-------------------------- -----------------------------> 0.6 (mu)m SLIDE 25 Diagram omitted TWINSCAN AT:1100B (ArF) - Imaging without RET Binary Mask NA = 0.75, (sigma)o = 0.89, (sigma)i = 0.65 80 nm 255 nm TOK TArF 6063 resist E: 29.6 mJ/cm2 81 nm AR19 with 52 nm AQ6 K1 = 0.31 Focus <-------------------------- -----------------------------> 0.45(mu)m o 80 nm Structures can be resolved without RET SLIDE 26 Diagrams omitted TWINSCAN AT:1100B (ArF) - CD Control 100 nm Isolated Lines Intra-field performance Inter-field performance Horizontal lines Vertical lines Horizontal lines Vertical lines CDUH = 2.6 nm FWCDUH = 5.1 nm CDUV = 3.7 nm FWCDUV = 5.9 nm CDUHV = 3.5 nm FWCDUHV = 5.7 nm SLIDE 27 Graphs omitted TWINSCAN - Process Overlay Poly 1 to STI (front-end) Metal 1 to Contact (back-end) SLIDE 28 Outline o Introduction o Twinscan Roadmap o Dual stage technology o Productivity o Twinscan dual stage performance o Conclusion SLIDE 29 Conclusion o Dual stage technology the standard for 300mm lithography o Productivity o Accuracy o Extendibility o Cost of ownership o ASML Twinscan ready today for 300mm volume manufacturing o ASML Twinscan well prepared for tomorrows volume manufacturing