EX-4 12 f8kex4-9.txt SECURITY AGREEMENT Exhibit 4.9 SECURITY AGREEMENT THIS SECURITY AGREEMENT dated March 28, 2002 is made and entered into by and between RAMTRON INTERNATIONAL CORPORATION, a corporation organized and existing under the laws of the State of Delaware and having its principal office at 1850 Ramtron Drive, Colorado Springs, Colorado 80921 ("Ramtron"), and INFINEON TECHNOLOGIES AG, a German stock corporation, having its principal office at St. Martin-Strasse 53, D-81541, Munich, Germany ("Infineon"). PRELIMINARY STATEMENT Infineon has purchased from Ramtron and Ramtron has issued to Infineon a Five Percent (5%) Secured Convertible Debenture in the principal amount of Three Million and No/100ths United States Dollars ($3,000,000.00) dated March 28, 2002 (the "Debenture"). The terms and conditions of Infineon's purchase of the Debenture are governed by that certain Securities Purchase Agreement dated as of March 14, 2002, by and between Ramtron and Infineon (the "Securities Purchase Agreement"). Capitalized terms used in this Security Agreement and not otherwise defined herein shall have the meanings ascribed to such terms in the Debenture or the Securities Purchase Agreement. It is a condition precedent to Infineon closing the transaction contemplated by the Securities Purchase Agreement that Ramtron shall have granted the security interests contemplated by this Security Agreement. NOW, THEREFORE, in consideration of the foregoing premises and in order to induce Infineon to advance funds to Ramtron under the Securities Purchase Agreement, Ramtron and Infineon hereby agree as follows: SECTION 1. Grant of Security. Ramtron hereby assigns, grants and conveys to Infineon a security interest in and to all of Ramtron's right, title and interest in and to the following, whether now owned or hereinafter acquired (collectively, the "Collateral"): (a) All accounts, receivables, contract rights, chattel paper, instruments and documents, and all rights to payment, arising out of sales by Ramtron to any customers located in European countries or whose purchase of goods or services from Ramtron is directed for use in such customer's European operations (the "Receivables"); (b) those patents listed on Exhibit A, attached hereto and incorporated herein by this reference, and all patent rights thereunder or relating thereto, including all rights existing thereunder under Federal and State laws and under common law (the "Intellectual Property"); (c) All general intangibles, contract rights, all choses in action, causes of action and all other intangible personal property of Ramtron of every kind and nature (other than accounts) now owned or hereafter acquired in connection with the Receivables, including, without limitation, any letters of credit, guarantee claims, security interests or other security held by or granted to Ramtron to secure payment by an account debtor of any of the accounts; and Page-1 (d) All additions and accessions to, substitutions for and all replacements, products and proceeds of the foregoing. SECTION 2. Security for Obligations. This Security Agreement secures the payment of all obligations of Ramtron to Infineon now or hereafter existing under the Debenture and the Securities Purchase Agreement (the "Documents"), as the same may be amended from time to time, whether for principal, interest, fees, charges, expenses or otherwise, and further secures all obligations of Ramtron to Infineon now or hereafter existing under this Security Agreement (all of the foregoing obligations being referred to herein collectively as the "Obligations"). SECTION 3. Ramtron Remains Liable. Anything herein to the contrary notwithstanding, (a) Ramtron shall remain liable under any and all contracts and agreements included in the Collateral to the extent set forth therein to perform all of its duties and obligations thereunder to the same extent as if this Security Agreement had not been executed, (b) the exercise by Infineon of any of its rights hereunder shall not release Ramtron from any of its duties or obligations under the contracts and agreements included in the Collateral, and (c) Infineon shall not have any obligation or liability under the contracts and agreements included in the Collateral by reason of this Security Agreement, nor shall Infineon be obligated to perform any of the obligations or duties of Ramtron thereunder or to take any action to collect or enforce any claim for payment assigned hereunder. SECTION 4. Representations and Warranties. (a) Ramtron represents and warrants to Infineon as follows: (1) Ramtron hereby repeats and confirms each and every representation and warranty made by it in the Documents as though fully set forth herein. (2) The chief place of business and chief executive office of Ramtron and the office where Ramtron keeps its records concerning the Receivables, and all originals of all chattel paper which evidence Receivables, is located at: 1850 Ramtron Drive, Colorado Springs, Colorado 80921. Ramtron's Federal Tax I.D. No. is 840962308. (3) Ramtron owns the Collateral free and clear of any lien, security interest, charge or encumbrance, except for the security interest created by this Security Agreement and except for any joint ownership interest of any third party in or any license granted with respect to any of the Intellectual Property, and has good and lawful authority to grant a security interest in the same and to assign all of its right, title and interest in and to the Collateral. No effective financing statement or other instrument similar in effect covering all or any part of Page-2 the Collateral is on file in any recording office, except such as may have been filed in favor of Infineon relating to this Security Agreement. Ramtron shall defend its ownership of, interest in or rights to the Collateral against the lawful claims of all persons whomsoever. (4) This Security Agreement has been duly authorized, executed and delivered by Ramtron and constitutes a legal, valid and binding obligation of Ramtron, enforceable against Ramtron in accordance with its terms. (5) This Security Agreement creates a valid and perfected first priority security interest in the Collateral, securing the payment of the Obligations, and all filings and other actions necessary or desirable to perfect and protect such security interest have been duly taken. (6) Except for financing statements, continuation statements and any necessary filings with the United States Patent and Trademark Office, no authorization, approval or other action by, and no notice to or filing with, any governmental authority or regulatory body is required either (i) for the continuation or grant by Ramtron of the security interest granted hereby or for the execution, delivery or performance of this Security Agreement by Ramtron, or (ii) for the perfection of the security interest granted hereby, or the exercise by Infineon of its rights and remedies hereunder. (b) With reference to any Receivable subject to this Security Agreement, Ramtron represents and warrants: (1) Said Receivable is genuine, is in all respects what it purports to be, is not evidenced by a judgment and is only evidenced by one, if any, executed original instrument, agreement, contract or document; (2) To the best of Ramtron's knowledge, said Receivable represents an undisputed bona fide transaction completed in accordance with the terms and provisions contained in any documents related thereto; (3) The amounts of the face value shown on any written assignment or report of Receivables provided to Infineon, and/or all invoices and statements delivered to Infineon with respect to any Receivables are actually owing to Ramtron; Page-3 (4) To the best of Ramtron's knowledge, there are no setoffs, counterclaims or disputes existing or asserted with respect thereto and Ramtron has not made any agreement with the account debtor thereunder for any deduction therefrom, except a discount or allowance allowed by Ramtron in the ordinary course of its business for prompt payment, all of which discounts or allowances are set forth upon the face of each respective invoice; (5) Ramtron has no knowledge of any facts, events or occurrences which in any way would impair the validity, value or collectibility of said Receivable or tend to reduce the amount payable thereunder from the amount of the invoice face value shown on any written assignment or pledge of Receivables, and on all contracts, invoices and statements delivered to Infineon with respect thereto; (6) To the best of Ramtron's knowledge, the account debtor thereunder (A) had the capacity to contract at the time any contract or other document giving rise to the Receivables was executed and (B) is solvent; (7) The goods giving rise to said Receivable are not, and were not at the time of the sale thereof, subject to any lien, claim, encumbrance or security interest, except those of Infineon, those removed or terminated prior to the date hereof and those subordinate to Infineon's security interest; (8) To the best of Ramtron's knowledge, there are no proceedings or actions which are threatened or pending against the account debtor thereunder which might result in any material adverse change in its financial condition; and (9) Said Receivable has not been assigned or pledged to any other person. (c) Except as disclosed in the Documents, including the Schedules thereto, or any of the Disclosure Documents, with reference to any Intellectual Property subject to this Security Agreement, Ramtron represents and warrants: (1) All Intellectual Property has been properly perfected and registered with all local, state and Federal agencies including, but not limited to, the United States Patent Office. All filings and registrations with regard to the Intellectual Property are current; (2) there are no pending or threatened lawsuits, counterclaims, disputes or challenges existing or asserted with respect to any of the Intellectual Property and Ramtron has not made any agreement with any third party, challenger, disputant or litigant in connection with any challenge so made; Page-4 (3) Ramtron has no knowledge of any fact or circumstance which would impair the validity, value, registration or priority of any of the Intellectual Property; and (4) Ramtron has made no prior pledge or assignment of any of the Intellectual Property to any other person or entity. SECTION 1. Further Assurances; Covenants. (a) Ramtron agrees that from time to time, at its own expense, Ramtron will promptly execute and deliver all further instruments and documents, and take all further action, that may be necessary or desirable, or that Infineon may request, in order to continue, perfect and protect any security interest granted or purported to be granted hereby or to enable Infineon to exercise and enforce its rights and remedies hereunder with respect to any Collateral. Without limiting the generality of the foregoing, Ramtron will: (i) pay the cost of such filing, recording or refiling and rerecording in all places and public offices as may be required by law to create, continue, perfect and preserve the lien hereof and wherever filing is deemed by Infineon to be necessary or desirable; (ii) if any Receivable shall be evidenced by a promissory note or other instrument or chattel paper, deliver and pledge to Infineon hereunder such note, instrument or chattel paper duly endorsed and accompanied by duly executed instruments of transfer or assignment, all in form and substance satisfactory to Infineon; (iii) execute and file such financing or continuation statements, or amendments thereto, and such other instruments or notices, as may be necessary or desirable, or as Infineon may request, in order to continue, perfect and preserve the security interests continued, granted or purported to be continued or granted hereby; (iv) defend the Intellectual Property against any claims, allegations or challenges from third parties; and (v) not impair, encumber or abandon the Intellectual Property and will renew, refile and take all steps necessary to preserve and protect the Intellectual Property and pay any and all fees as appropriate. (b) No later than the fifteenth (15th) business day of each April, July, October and January during the term of this Security Agreement, Ramtron shall provide a report to Infineon reporting on the status of all Receivables, effective as of the last date of the preceding calendar quarter. Said status report shall contain a list of each Receivable, the amount outstanding thereunder, whether said Receivable is current or delinquent beyond thirty (30) days, whether any claims or defenses have been asserted to the payment of said Receivable, and shall serve to remake all warranties and representations contained in this Security Agreement concerning the Receivables. Page-5 (c) Ramtron hereby authorizes Infineon to file one or more financing or continuation statements, and amendments thereto, and to file such statements electronically, if available, relative to all or any part of the Collateral without the signature of the Ramtron where permitted by law. (d) Ramtron will furnish to Infineon from time to time statements and schedules further identifying and describing the Collateral and its location and such other reports in connection with the Collateral as Infineon may reasonably request, all in reasonable detail. (e) Ramtron agrees that it shall permit no further lien, encumbrance, claim or levy upon any of the Receivables. Ramtron shall not sell, convey, factor, assign or pledge any of its interest in the Receivables and shall promptly notify Infineon if it receives notice of any claim, lien, levy or encumbrance claimed against or levied against the Receivables, or any of them. SECTION 6. As to Receivables. (a) Ramtron shall keep its chief place of business and chief executive office and the office where it keeps its records concerning the Receivables, and all originals of all chattel paper which evidence Receivables, as specified in Section 4(b) or, upon 30 days prior written notice to Infineon, at such other locations in a jurisdiction where all action required by Section 5 shall have been taken with respect to the Receivables. Ramtron will hold and preserve such records and chattel paper and will permit representatives of Infineon at any time during normal business hours to inspect and make copies of and abstracts from such records and chattel paper. (b) Ramtron agrees to make clear and suitable entries and notations on Ramtron's books and records, which shall reflect all facts giving rise to the Receivables (and in such a case where the Receivables arise by reason of a sale or delivery of merchandise, such notation shall clearly reflect the absolute sale of such merchandise), all payments, credits and adjustments applicable to the Receivables and the security interest of Infineon. Any agent of Infineon shall have the right to call at Ramtron's place of business and, without hindrance or delay, inspect, examine, audit and check and make abstracts from the books, records, receipts, correspondence, memoranda and other papers or data of Ramtron. If Infineon, in the exercise of its reasonable judgment after consultation with Ramtron, determines that it has a valid concern about the status or collectability of any of the Receivables or of Ramtron's performance under this Security Agreement, the Securities Purchase Agreement or the Debenture, Infineon shall have the right to verify by mail, phone or otherwise all or part of all Receivables in its own name or otherwise and Ramtron will provide any and all information necessary to accomplish Infineon's verification. Ramtron agrees at all times to maintain a complete set of books and records, containing up to date posting of all Ramtron's cash and accrual transactions of whatsoever nature. Page-6 (c) If Infineon, in the exercise of its reasonable judgment after consultation with Ramtron, determines that it has a valid concern about the status or collectability of any of the Receivables or of Ramtron's performance under this Security Agreement, the Securities Purchase Agreement or the Debenture, Infineon may notify account debtors on any Receivables that the Receivables have been assigned to Infineon. (d) Ramtron shall not, without the express written consent of Infineon, release, compromise or adjust any Receivable, or any guaranty, security or lien therefore, or grant any discounts, allowances or credits thereon, or bring any suit to enforce payment thereof, other than in the ordinary course of business consistent with past practices. SECTION 7. Transfers and Other Liens. Ramtron shall not: (a) Sell, transfer, assign or otherwise dispose of any of the Collateral, by operation of law or otherwise, other than the grant of licenses with respect to any of the Intellectual Property in the ordinary course of business consistent with past practices. (b) Create or suffer to exist any lien, security interest or other charge or encumbrance whatsoever, upon or with respect to any of the Collateral and arising from any act or omission of Ramtron, except for the security interest created by this Security Agreement. SECTION 8. Infineon Appointed Attorney-in-Fact. Ramtron hereby irrevocably appoints Infineon its attorney-in-fact, coupled with an interest, with full authority in its place and stead and in its name or otherwise, after the occurrence and during the continuation of an Event of Default to take any action and to execute any instrument which Infineon may deem necessary or advisable to accomplish the purposes of this Security Agreement, including, without limitation: (a) to ask, demand, collect, sue for, recover, compound, receive and give acquittance and receipts for moneys due and to become due under or in respect of any of the Collateral; (b) to receive, endorse and collect any drafts or other instruments, documents and chattel paper, in connection with clause (a) above; and (c) to file any claims or take any action or institute any proceedings which Infineon may deem necessary or desirable for the collection of any of the Collateral or otherwise to enforce, confirm or perfect the rights of Infineon with respect to any of the Collateral. SECTION 9. Infineon May Perform. If Ramtron fails to perform any agreement contained herein, then Infineon may itself perform or cause performance of such agreement, all without releasing Ramtron from any obligation hereunder or under the Documents or any of them; and the expenses of Infineon incurred in connection therewith shall be payable by Ramtron. Page-7 SECTION 10. Infineon's Duties. The powers conferred on Infineon hereunder are solely to protect its interest in the Collateral and shall not impose any duty upon it to exercise any such powers. No action or inaction on the part of the Infineon shall adversely affect or limit in any way the rights of Infineon under this Security Agreement. Except for the safe custody of any Collateral in its possession and the accounting for moneys actually received by it hereunder, Infineon shall have no duty as to any Collateral or as to the taking of any necessary steps to preserve rights against prior parties or any other rights pertaining to any Collateral. SECTION 11. Remedies. If an Event of Default shall have occurred and be continuing: (a) Infineon may exercise in respect of the Collateral, in addition to other rights and remedies provided for herein or otherwise available to it, all the rights and remedies of a secured party on default under the Uniform Commercial Code (the "Code") (whether or not the Code applies to the affected Collateral) and also may (i) require Ramtron to, and Ramtron hereby agrees that it will at its expense and upon request of Infineon forthwith, assemble all or part of the Collateral as directed by Infineon and make it available to Infineon at a place to be designated by Infineon which is reasonably convenient to both parties and (ii) without notice except as specified below, sell the Collateral or any part thereof in one or more parcels at public or private sale, at any of Infineon's offices or elsewhere, for cash, on credit or for future delivery, and at such price or prices and upon such other terms as Infineon may deem commercially reasonable. Ramtron agrees that, to the extent notice of sale shall be required by law, at least ten (10) calendar days notice to Ramtron of the time and place of any public sale or the time after which any private sale is to be made shall constitute reasonable notification. Infineon shall not be obligated to make any sale of Collateral regardless of notice of sale having been given. Infineon may adjourn any public or private sale from time to time by announcement at the time and place fixed therefor, and such sale may, without further notice, be made at the time and place to which it was so adjourned. (b) Any proceeds of any of the Receivables received by Ramtron shall be received by Ramtron as trustee for Infineon, and Ramtron shall promptly turn over and/or mail and deliver to the office of Infineon, on the day of receipt thereof, all cash, original checks, drafts, notes and other evidences of payment received in full or part payment of any Receivables, with full right in Infineon to endorse and deposit such original account debtor's checks and remittances to its own account, whether said remittances are made payable to Infineon or Ramtron. Page-8 (c) Infineon may, without notice to Ramtron, notify account debtors on any Receivables that the Receivables have been assigned to Infineon and shall be paid directly to Infineon, and/or require Ramtron to so notify account debtors and indicate on all billings to account debtors that all moneys due thereon are payable to Infineon. Infineon shall further have the right, directly or through its agents, to collect any or all of the Receivables, and in its own name, or in Ramtron's name, to sell, transfer, set over, compromise, discharge or extend the whole or any part of the Receivables, and for that purpose to do all acts and things necessary or incidental thereto, including the right of suit, Ramtron hereby ratifying all that Infineon shall do by virtue hereof. Granting extensions to account debtors or to Ramtron, suffering any delay or permitting any breach by Ramtron or account debtors in connection with any transaction between the parties hereto, shall in no way be construed as a waiver of any subsequent breach or delay or of the rights of Infineon against Ramtron and the account debtors, and Ramtron's liability shall in no way be restricted, limited, diminished or abated by virtue of any such extension or privilege granted. Infineon shall not, under any circumstances, or in any event whatsoever, have any liability for any error, omission or delay of any kind occurring in the settlement, collection or payment of any Receivable or of any instrument received in full or part payment thereof or in dealing with any lien, security or guaranty of any Receivable. (d) All cash proceeds received by Infineon in respect of any sale of, collection from, or other realization upon all or any part of the Collateral may, in the discretion of Infineon, be held by Infineon as collateral for, and/or then or at any time thereafter applied, in whole or in part by Infineon against, all or any part of the Obligations, in such order as the Documents or applicable law shall provide. Any surplus of such cash or cash proceeds held by Infineon and remaining after payment in full of all the Obligations shall be paid over to Ramtron or to whomsoever may be lawfully entitled to receive such surplus. (e) Notwithstanding anything to the contrary in this Security Agreement, Infineon agrees that before it exercises its remedies against the Intellectual Property, in the exercise of its good faith, reasonable business judgment, it shall have determined that the amount which may be collected by Infineon as a result of the exercise of its remedies upon the Receivables will be inadequate to satisfy all of the Obligations. SECTION 12. Indemnity and Expenses. (a) Ramtron agrees to indemnify Infineon from and against any and all claims, losses and liabilities growing out of or resulting from this Security Agreement (including, without limitation, enforcement of this Security Agreement), except claims, losses or liabilities resulting from Infineon's gross negligence or willful misconduct. Page-9 (b) Ramtron will upon demand pay to Infineon the amount of any and all reasonable expenses, including the reasonable fees and expenses of its counsel and of any experts and agents, which Infineon may incur in connection with (i) the administration of this Security Agreement, (ii) the custody or preservation of, or the sale of, collection from, or other realization upon, any of the Collateral, (iii) the exercise or enforcement of any of the rights of Infineon hereunder or (iv) the failure by Ramtron to perform or observe any of the provisions hereof. SECTION 13. Security Interest Absolute. All rights of Infineon and security interests hereunder, and all Obligations of Ramtron hereunder, shall be absolute and unconditional irrespective of: (a) any lack of validity or enforceability of the Debenture, Securities Purchase Agreement or any other agreement or instrument relating thereto; (b) any change in the time, manner or place of payment of, or in any other term of, any or all of the Obligations, or any other amendment or waiver of or any consent to any departure from the Debenture or the Securities Purchase Agreement; (c) any exchange or release of collateral or nonperfection of any security interest, or any release or amendment or waiver of or consent to departure from any guaranty, for all or any of the Obligations; or (d) any other circumstances which might otherwise constitute a defense available to, or a discharge of, Ramtron in respect of the Obligations or this Security Agreement. SECTION 14. Amendments, Etc. No amendment or waiver of any provision of this Security Agreement nor consent to any departure by Ramtron herefrom shall in any event be effective unless the same shall be in writing and signed by Infineon, and then such amendment, waiver or consent shall be effective only in the specific instance and for the specific purpose for which given. SECTION 15. Addresses for Notices. Any notice, demand or request required or permitted to be given by Ramtron or Infineon pursuant to the terms of this Security Agreement shall be in writing and shall be deemed delivered (i) when delivered personally or by verifiable facsimile transmission, unless such delivery is made on a day that is not a Business Day, in which case such delivery will be deemed to be made on the next succeeding Business Day or (ii) on the next Business Day after timely delivery to an overnight courier, addressed as follows: Page-10 If to Ramtron: Ramtron International Corporation 1850 Ramtron Drive Colorado Springs, CO 80921 Attn: LuAnn D. Hanson, Chief Financial Officer Tel: (719) 481-7000 Fax: (719) 481-9170 With a copy to: Coudert Brothers LLP 950 Seventeenth Street, Suite 1800 Denver, CO 80202 Attn: John A. St. Clair, Esq. Tel: (303) 260-6221 Fax: (303) 607-1080 If to Infineon: Infineon Technologies AG M&A Department St. Martin-Strasse 53 D-81541 Munich Fax: 49 89 234 8 5872 Attn: Arno Paetzold With copies to: Infineon Technologies AG St. Martin-Strasse 53 D-81541 Munich Fax: 49 89 234 2 6583 Attn: Finanzvorstand and General Counsel and Sullivan & Cromwell Neue Mainzer Strasse 52 60311 Frankfurt am Main Germany Fax: 49 69 7191 2610 Attn: David B. Rockwell, Esq. For purposes of this Section, "Business Day" shall mean any day other than a Saturday, a Sunday or a day on which banks are authorized by law to close in New York, New York or Frankfurt, Germany. Page-11 SECTION 16. Continuing Security Interest; Assignments by Infineon; Termination. This Security Agreement shall create and confirm a continuing first priority security interest in the Collateral and shall (i) remain in full force and effect until all of the Obligations have been fully discharged and satisfied by Ramtron, (ii) be binding upon Ramtron, its successors and assigns and (iii) inure, together with the rights and remedies of Infineon hereunder, to the benefit of Infineon and its respective successors, transferees and assigns. Infineon may at any time assign any or all of its rights under this Security Agreement to any party; provided, however, that upon any such assignment, written notice thereof (which notice shall include an address and telephone number for the assignee) shall be provided to Ramtron by either Infineon or the assignee. Upon the full discharge and satisfaction of the Obligations by Ramtron, by repayment in full of all amounts owing pursuant to the Debenture and/or the conversion of all obligations owing pursuant to the Debenture into common stock of Ramtron in accordance with the provisions of the Debenture, this Security Agreement and all rights herein assigned to Infineon shall terminate, and Ramtron shall be entitled to the return, upon its request and at its expense, of such of the Collateral as shall not have been sold or otherwise applied pursuant to the terms hereof. SECTION 17. Severability and Applicable Laws. Any provision of this Security Agreement prohibited or unenforceable by any applicable law of any jurisdiction shall, with respect to such jurisdiction, be ineffective to the extent of such prohibition or unenforceability without invalidating the remaining provisions hereof, and any such prohibition or unenforceability in any jurisdiction shall not invalidate or render unenforceable such provision in any other jurisdiction. Except as otherwise provided in this Security Agreement, Ramtron, to the full extent permitted by law, hereby waives (i) all statutory or other legal requirements for any notice of any kind, including without limitation notice of intention to take possession of or to sell or lease all or any portion of the Equipment and any other requirements as to the time, place and terms of the sale or lease thereof, (ii) any other requirements with respect to the enforcement of the Infineon's rights under this Security Agreement, and (iii) any and all rights of redemption. SECTION 18. Remedies Cumulative. No right, power or remedy conferred upon or reserved to the Infineon under this Security Agreement, the Securities Purchase Agreement or the Debenture is exclusive of any other right, power or remedy, but each and every such right, power and remedy shall be cumulative and concurrent and shall be in addition to any other right, power and remedy given hereunder or under the Securities Purchase Agreement or Debenture, or now or hereafter existing at law, in equity or by statute. Page-12 SECTION 19. Governing Law; Terms. This Security Agreement shall be governed by and construed in accordance with the laws of the State of New York, except as required by mandatory provisions of law and except to the extent that the validity or perfection of the security interest hereunder, or remedies hereunder, in respect of any particular portion of the Collateral is governed by the laws of a jurisdiction other than the State of New York. Unless otherwise defined herein or in the Documents, terms defined in Article 9 of the Uniform Commercial Code (as enacted in the State of New York) and used herein shall have the meanings set forth therein. IN WITNESS WHEREOF, the parties have caused this Security Agreement to be duly executed and delivered by their officers thereunto duly authorized as of the date first above written. RAMTRON INTERNATIONAL CORPORATION, a Delaware corporation: By: /S/ William W. Staunton, III ------------------------------- Name: William W. Staunton, III Its: CEO INFINEON TECHNOLOGIES AG, a German stock corporation: By: /S/ Dr. Michael Majerus --------------------------- Name: Dr. Michael Majerus Its: Vice President Business Administration Memory Product Group By: /S/ Dr. Harald Eggers ------------------------ Name: Dr. Harald Egger Its: Sr. Vice President and General Manager Memory Product Group Page-13 Exhibit A List of Intellectual Property Issued Patents RIC Company Confidential Total Issued Patents 228 Docket Patent No. Type Title No. Issued Expires Inventor ------- ---- ---------------------- ---------- ---------- ---------- -------------------- ----------------------------------------------------------------------------------------------------------------------- United States 139 =================== RAM145 FRAM MONOLITHIC SEMICONDUCTOR 4,707,897 11/24/1987 11/24/2004 George A. ROHRER, et al. RAM220 FRAM COMBINED INTEGRATED 4,713,157 12/15/1987 5/14/2005 Carlos Paz de ARAUJO, et al. CIRCUIT/FERROELECTRIC RAM240 FRAM METHOD OF MAKING 5,024,964 6/18/1991 6/18/2008 George A. ROHRER, et al. FERROELECTRIC MEMORY RAM240 FRAM MONOLITHIC SEMICONDUCTOR 5,214,300 5/25/1993 5/25/2010 George A. ROHRER, et al. DIV2 INTEGRATED CIRCUIT RAM302 FRAM SELF RESTORING 4,873,664 10/10/1989 2/12/2007 S. Sheffield EATON, Jr. FERROELECTRIC MEMORY RAM303 FRAM MEMORY CELL WITH VOLATILE 4,809,225 2/28/1989 7/2/2007 Klaus DIMMLER, et al. AND NON-VOLATILE PORTIONS RAM304 FRAM TIMEPIECE COMMUNICATION 4,800,543 1/24/1989 12/3/2007 Alfred P. GNADINGER, et al. RF/ID SYSTEM RAM305 DRAM DATA STORAGE DEVICE AND 4,853,893 8/1/1989 7/2/2007 Michael C. PARRIS, et al. METHOD OF USING A RAM305 DRAM SRAM WITH PROGRAMMABLE 4,918,654 4/17/1990 7/2/2007 Michael C. PARRIS, et al. DIV CAPACITANCE DIVIDER RAM305 DRAM DRAM WITH PROGRAMMABLE 4,910,708 3/20/1990 7/2/2007 Michael C. PARRIS, et al. DIV2 CAPACITANCE DIVIDER RAM305 DRAM ONE TRANSISTOR MEMORY CELL 4,914,627 4/3/1990 7/2/2007 Michael C. PARRIS, et al. DIV3 WITH PROGRAMMABLE RAM309 FRAM FERROELECTRIC RETENTION 4,893,272 1/9/1990 4/22/2008 Douglas B. BUTLER, et al. METHOD RAM310 FRAM DRAM MEMORY CELL AND 5,109,357 4/28/1992 4/28/2009 S. Sheffield EATON, Jr. CON METHOD OF OPERATION RAM311/ FRAM NON-VOLATILE MEMORY CELL 4,888,733 12/19/1989 9/12/2008 Kenneth J. MOBLEY 312 AND SENSING METHOD Page A-1 RAM314 FRAM MULTILAYER ELECTRODES FOR 5,005,102 4/2/1991 6/20/2009 William LARSON INTEGRATED CIRCUIT RAM317 DRAM METHOD FOR CREATING SELF- 5,104,822 4/14/1992 7/30/2010 Douglas B. BUTLER ALIGNED, NON-PATTERNED RAM317 DRAM STACKED CAPACITOR WITH 5,162,890 11/10/1992 7/30/2010 Douglas B. BUTLER DIV SIDEWALL INSULATION RAM319 DRAM REACTION BARRIER FOR A 5,170,242 12/8/1992 12/8/2009 E. Henry STEVENS, et al. CON MULTILAYER STRUCTURE IN AN RAM320 DRAM TRENCH CAPACITOR FOR LARGE 5,075,817 12/24/1991 6/22/2010 Douglas B. BUTLER SCALE INTEGRATED MEMORY RAM321 DRAM PROCESS FOR FABRICATING 5,610,099 3/11/1997 6/28/2014 E. Henry STEVENS, et al. TRANSISTORS USING RAM322 DRAM SEALED SELF ALIGNED 5,043,790 8/27/1991 4/5/2010 Douglas B. BUTLER CONTACTS USING TWO NITRIDES FRAM322 DRAM SEALED SELF ALIGNED CONTACT 5,216,281 6/1/1993 6/1/2010 Douglas B. BUTLER CIP INCORPORATING A DOPANT RAM322 DRAM SEALED SELF ALIGNED 5,385,634 1/31/1995 1/31/2012 Douglas B. BUTLER, et al. DIV2 CONTACTS USING TWO NITRIDES RAM324 DRAM CURRENT SUPPLY CIRCUIT FOR 5,134,310 7/28/1992 1/23/2011 Kenneth J. MOBLEY, et al. DRIVING HIGH CAPACITANCE RAM325 DRAM REFERENCE GENERATOR FOR 5,117,177 5/26/1992 1/23/2011 S. Sheffield EATON, Jr. AN INTEGRATED CIRCUIT RAM326 DRAM OUTPUT CONTROL CIRCUIT 5,255,222 10/19/1993 1/23/2011 S. Sheffield EATON, Jr. HAVING CONTINUOUSLY RAM329 FRAM OZONE GAS PROCESSING FOR 5,374,578 12/20/1994 2/25/2012 Divyesh N. PATEL, et al. FWC FERROELECTRIC MEMORY RAM330 FRAM CONDUCTING ELECTRODE 5,142,437 8/25/1992 6/13/2011 Lee KAMMERDINER, et al. LAYERS FOR FERROELECTRIC RAM332 FRAM METHOD FOR MAKING A 5,580,814 12/3/1996 6/10/2014 William LARSON DIV FERROELECTRIC MEMORY CELL RAM332 FRAM STACKED FERROELECTRIC 5,495,117 2/27/1996 5/27/2013 William LARSON FWC2 MEMORY CELL RAM335 FRAM STRUCTURE OF HIGH 5,338,951 8/16/1994 11/6/2011 George ARGOS, Jr., et al. DIELECTRIC CONSTANT Page A-2 RAM336 FRAM SERIES FERROELECTRIC 5,206,788 4/27/1993 12/12/2011 Constance DeSMITH, et al. CAPACITOR STRUCTURE FOR RAM337 FRAM USE OF PALLADIUM AS AN 5,191,510 3/2/1993 4/29/2012 Maria HUFFMAN ADHESION LAYER AND AS AN RAM338 FRAM SEIMCONDUCTOR DEVICE WITH 5,293,510 3/8/1994 12/20/2011 Kazuhiro TAKENAKA FERROELECTRIC AND METHOD RAM340 FRAM METHOD OF MANUFACTURING 5,229,309 7/20/1993 5/31/2011 Koji KATO SEMICONDUCTOR DEVICE USING RAM341 FRAM STRUCTURE AND METHOD FOR 5,216,572 6/1/1993 3/19/2012 Paul J. SCHUELE, et al. INCREASING THE DIELECTRIC RAM343 EDRAM ENHANCED DRAM WITH ALL 5,699,317 12/16/1997 12/16/2014 Donald G. CARRIGAN, et al. CIP READS FROM ON-CHIP CACHE RAM343 EDRAM ENHANCED DRAM WITH SINGLE 5,721,862 2/24/1998 2/24/2015 Donald G. CARRIGAN, et al. CON ROW SRAM CACHE FOR ALL RAM343 EDRAM ENHANCED DRAM WITH 5,887,272 3/23/1999 6/2/2015 Donald G. CARRIGAN, et al. DIV EMBEDDED REGISTERS RAM343 EDRAM ENHANCED DRAM WITH 6,347,357 2/12/2002 7/3/2017 Donald G. CARRIGAN, et al. DIV/CON EMBEDDED REGISTERS RAM348 FRAM SEMCONDUCTOR DEVICE 5,369,296 11/29/1994 5/12/2012 Koji KATO FWC HAVING A FERROELECTRIC FILM RAM352 FRAM SEMICONDUCTOR DEVICE 5,523,595 6/4/1996 6/4/2013 Akira FUJISAWA, et al. FWC HAVING A TRANSISTOR, A RAM357 FRAM FERROELECTRIC MEMORY 5,866,926 2/2/1999 2/2/2016 Kazuhiro TAKENAKA FWC DEVICE WITH CAPACITOR RAM358 FRAM SEMICONDUCTOR DEVICE WITH 5,475,248 12/12/1995 12/13/2013 Kazuhiro TAKENAKA FWC2 A CONDUCTIVE REACTION- RAM360 FRAM NON-VOLATILE FERROELECTRIC 5,371,699 12/6/1994 11/17/2012 William LARSON MEMORY WITH FOLDED BIT RAM365 FRAM FERROELECTRIC-BASED RAM 5,381,364 1/10/1995 6/24/2013 Harold Brett MEADOWS, et al. SENSING SCHEME INCLUDING RAM368 FRAM INTEGRATION OF HIGH VALUE 5,909,624 6/1/1999 9/8/2015 Dennis R. WILSON, et al. DIV RF/ID CAPACITOR WITH RAM368 FRAM INTEGRATION OF HIGH VALUE 5,608,246 3/4/1997 2/10/2014 Dennis R. WILSON, et al. FWC RF/ID CAPACITOR WITH Page A-3 RAM370 FRAM FERROELECTRIC MEMORY 5,530,668 6/25/1996 4/12/2015 Dennis R. WILSON, et al. SENSING SCHEME USING BIT RAM371 FRAM VOLTAGE REFERENCE FOR A 5,572,459 11/5/1996 9/16/2014 Dennis R WILSON, et al. FERROELECTRIC 1T/1C BASED RAM371 FRAM VOLTAGE REFERENCE FOR A 5,822,237 10/13/1998 9/16/2014 Dennis R. WILSON, et al. DIV FERROELECTRIC 1T/1C BASED RAM374 FRAM FERROELECTRIC CAPACITOR 5,525,528 6/11/1996 2/23/2014 Sanjay MITRA, et al. RENEWAL METHOD RAM375 RFID SYSTEM AND METHOD FOR 5,434,572 7/18/1995 6/7/2014 Gregory M. SMITH INITIATING COMMUNICATIONS RAM376 FRAM NOISE AND GLITCH 5,479,132 12/26/1995 6/6/2014 Donald J. VERHAEGHE, et al. SUPPRESSING FILTER WITH RAM377 FRAM METHOD OF MANUFACTURING 5,426,075 6/20/1995 6/15/2014 Stanley C PERINO, et al. FERROELECTRIC BISMUTH RAM377 FRAM METHOD OF MANUFACTURING 5,519,566 5/21/1996 6/15/2014 Stanley C. PERINO, et al. CON FERROELECTRIC BISMUTH RAM378 FRAM LAYERED LOCAL INTERCONNECT 5,498,569 3/12/1996 8/22/2014 Brian Lee EASTEP COMPATIBLE WITH INTEGRATED RAM379 FRAM PASSIVATION METHOD AND 5,438,023 8/1/1995 3/11/2014 George ARGOS, Jr., et al. STRUCTURE FOR A RAM379 FRAM PASSIVATION METHOD AND 5,578,867 11/26/1996 3/11/2014 George ARGOS, Jr., et al. STRUCTURE USING HARD RAM380 FRAM SYSTEM AND METHOD FOR 5,394,367 2/28/1995 3/18/2014 Jeffrey E DOWNS, et al. WRITE-PROTECTING RAM381 EDRAM CIRCUIT WITH A SINGLE 5,566,318 10/15/1996 8/2/2014 James Dean JOSEPH ADDRESS REGISTER THAT RAM382 FRAM FERROELECTRIC MEMORY 5,532,953 7/21/1996 3/29/2015 Manooch GOLABI, et al. SENSING METHOD USING RAM384 FRAM CIRCUIT AND METHOD FOR 5,592,410 1/7/1997 4/10/2015 Donald J. VERHAEGHE, et al. REDUCING A COMPENSATION OF RAM384 FRAM CIRCUIT AND METHOD FOR 5,815,430 9/29/1998 4/10/2015 Donald J. VERHAEGHE, et al. DIV REDUCING COMPENSATION OF A RAM386 FRAM LOW LOSS, REGULATED CHARGE 5,889,428 3/30/1999 3/30/2016 Dennis YOUNG PUMP WITH INTEGRATED Page A-4 RAM387 FRAM FERROELECTRIC NONVOLATILE 5,598,366 1/28/1997 8/16/2015 Dennis R. WILSON, et al. RANDOM ACCESS MEMORY RAM388 FRAM BOOTSTRAPPING CIRCUIT 5,774,392 6/30/1998 3/28/2016 Dennis R. WILSON, et al. UTILIZING A FERROELECTRIC RAM389 EFRAM COMPUTER HYBIRD MEMORY 5,875,451 2/23/1999 3/14/2016 James Dean JOSEPH INCLUDING DRAM AND EDRAM RAM390 EDRAM MULTIBUS CACHED MEMORY 5,802,560 9/1/1998 8/30/2015 Dion Nickolas HEISLER, et al. SYSTEM RAM391 RFID PROGRAMMABLE OUTPUT 5,926,110 7/20/1999 8/30/2015 Gregory M. SMITH, et al. DEVICES FOR CONTROLLING RAM393 EDRAM EDRAM WITH INTEGRATED 5,835,442 11/10/1998 3/22/2016 Dion Nickolas HEISLER, et al. GENERATION AND CONTROL OF RAM394 EDRAM EDRAM HAVING A DYNAMICALLY- 5,983,313 11/9/1999 4/10/2016 Dion Nickolas HEISLER, et al. SIZED CACHE MEMORY AND RAM396 FRAM USE OF CALCIUM AND 5,969,935 10/19/1999 3/15/2016 Lee KAMMERDINER, et al. STRONTIUM DOPANTS TO RAM396 FRAM USE OF CALCIUM AND 5,800,683 9/1/1998 3/15/2016 Lee KAMMERDINER, et al. DIV STRONTIUM DOPANTS TO RAM397 FRAM A METHOD OF MEASURING 6,008,659 12/28/1999 3/15/2016 Steven D. TRAYNOR RETENTION PERFORMANCE AND RAM398 FRAM IRIDIUM OXIDE LOCAL 5,838,605 11/17/1998 3/20/2016 Richard A. BAILEY INTERCONNECT RAM398 FRAM METHOD OF FORMING IRIDIUM 5,985,713 11/16/1999 3/20/2016 Richard A. BAILEY OXIDE LOCAL INTERCONNECT RAM399 FRAM YIELD ENHANCEMENT 5,990,513 11/23/1999 10/8/2016 George ARGOS, Jr., et al. TECHNIQUE FOR INTEGRATED RAM399 FRAM YIELD ENHANCEMENT 6,190,926 2/20/2001 10/8/2016 George ARGOS, Jr., et al. DIV TECHNIQUE FOR INTEGRATED RAM400 FRAM LOW VOLTAGE BOOTSTRAPPING 5,999,461 12/7/1999 6/7/2016 Dennis R WILSON, et al. DRAM CIRCUIT RAM402 FRAM SERIAL FRAM ARCHITECTURE TO 5,912,846 6/15/1999 2/28/2017 Craig TAYLOR EQUALIZE COLUMN ACCESSES RAM403 FRAM SYSTEM AND METHOD FOR 5,745,403 4/28/1998 2/28/2017 Craig TAYLOR MITIGATING IMPRINT EFFECT IN Page A-5 RAM404 FRAM SAME STATE AND OPPOSITE 5,661,730 8/26/1997 9/27/2016 Donald J. VERHAEGHE, et al. STATE DIAGNOSTIC TEST FOR RAM405 FRAM BANDGAP REFERENCE BASED 5,852,376 12/22/1998 8/23/2016 William F. KRAUS POWER-ON DETECT CIRCUIT RAM405 FRAM BANDGAP REFERENCE BASED 5,867,047 2/2/1999 8/23/2016 William F. KRAUS CON POWER-ON DETECT CIRCUIT RAM406 FRAM DATA PROCESSING 5,890,199 3/30/1999 10/21/2016 Jeffrey E DOWNS INCORPORATE A RAM407 FRAM COMPLETELY ENCAPSULATED 5,920,453 7/6/1999 8/20/2016 George ARGOS, Jr., et al. TOP ELECTRODE OF A RAM407 FRAM PARTIALLY OR COMPLETELY 5,864,932 2/21/1999 8/20/2016 George ARGOS, Jr., et al. CIP ENCAPSULATED TOP RAM407 FRAM PARTIALLY OR COMPLETELY 6,027,947 2/22/2000 10/11/2016 George ARGOS, Jr., et al. CIP2 ENCAPSULATED TOP RAM407 FRAM METHOD OF FABRICATING 6,150,184 11/21/2000 3/27/2017 George ARGOS, Jr., et al. CIP2 DV PARTIALLY OR COMPLETELY RAM407 FRAM PARTIALLY OR COMPLETELY 6,211,542 4/3/2001 3/27/2017 Brian Lee EASTEP, et al. CIP3 ENCAPSULATED TOP RAM407 FRAM COMPLETELY ENCAPSULATED 6,281,023 8/28/2001 5/27/2018 Brian Lee EASTEP, et al. CIP3 DIV TOP ELECTRODE OF A RAM409 DRAM SEMICONDUCTOR MEMORY 5,818,771 10/6/1998 9/30/2016 Donald J. VERHAEGHE, et al. DEVICE RAM410 FRAM SYSTEM AND METHOD 5,802,583 9/1/1998 10/30/2016 Jeffrey E. DOWNS, et al. DRAM PROVIDING SELECTIVE WRITE RAM412 FRAM LOW-POWER, NON-RESETABLE 5,804,996 9/8/1998 2/13/2017 Donald J. VERHAEGHE, et al. TEST MODE CIRCUIT RAM414 FRAM SENSING METHODOLOGY FOR A 5,880,989 3/9/1999 11/14/2017 Dennis R. WILSON, et al. 1T/1C FERROELECTRIC MEMORY RAM415 FRAM DUAL-LEVEL METALIZATION 5,902,131 5/11/1999 5/9/2017 George ARGOS, Jr., et al. METHOD FOR INTEGRATED RAM417 EDRAM ENHANCED SIGNAL PROCESSING 5,991,851 11/23/1999 5/2/2017 Kenneth J. MOBLEY, et al. RANDOM ACCESS MEMORY RAM418 EDRAM FIRST-IN, FIRST-OUT 5,901,100 5/4/1999 4/1/2017 Craig TAYLOR DRAM INTEGRATED CIRCUIT MEMORY Page A-6 RAM418 EDRAM FIRST-IN, FIRST-OUT 6,072,741 6/6/2000 4/1/2017 Craig TAYLOR CIP DRAM INTEGRATED CIRCUIT MEMORY RAM418 EDRAM FIRST-IN, FIRST-OUT 6,172,927 1/9/2001 3/11/2019 Craig TAYLOR CIP2 DRAM INTEGRATED CIRCUIT MEMORY RAM421 FRAM MULTI-LAYER APPROACH FOR 6,080,499 6/2/2000 7/18/2017 Brian Lee EASTEP OPTIMIZING FERROELECTRIC RAM421 FRAM MULTI-LAYER APPROACH FOR 6,090,443 7/18/2000 7/18/2017 Brian Lee EASTEP CIP OPTIMIZING FERROELECTRIC RAM421 FRAM MULTI-LAYER APPROACH FOR 6,287,637 9/11/2001 4/22/2018 Brian Lee EASTEP, et al. CIP2 OPTIMIZING FERROELECTRIC RAM422 EDRAM INTEGRATED CIRCUIT MEMORY 6,263,398 7/17/2001 2/10/2018 Craig TAYLOR, et al. FRAM DEVICE INCORPORATING A NON- RAM424 FRAM VOLTAGE BOOST CIRCUIT AND 5,854,568 12/29/1998 8/20/2017 Gary Peter MOSCALUK OPERATION THEREOF AT LOW RAM425 4037 PLASTIC PACKAGE ASSEMBLY 6,232,153 5/15/2001 6/4/2018 Sanjay MITRA, et al. METHOD FOR FERROELECTRIC- RAM427 FRAM SENSE AMPLIFIER UTILIZING A 5,901,088 5/4/1999 2/11/2018 William F. KRAUS BALANCING RESISTOR RAM429 EDRAM TECHNIQUE FOR REDUCING 6,141,281 10/31/2000 4/29/2018 Kenneth J. MOBLEY, et al. ELEMENT DISABLE FUSE PITCH RAM430 EDRAM DYNAMIC RANDOM ACCESS 6,055,192 4/25/2000 9/3/2018 Kenneth J. MOBLEY MEMORY WORD LINE BOOST RAM432 EDRAM MULTI-ARRAY MEMORY DEVICE, 6,064,620 5/16/2000 7/8/2018 Kenneth J. MOBLEY AND ASSOCIATED METHOD RAM432 EDRAM MULTI-ARRAY MEMORY DEVICE 6,278,646 8/21/2001 7/8/2018 Kenneth J. MOBLEY CIP AND ASSOCIATED METHOD RAM433 FRAM REFERENCE CELL FOR 1T/1C 5,956,266 9/21/1999 11/14/2017 Judith E. ALLEN, et al. FERROELECTRIC MEMORY RAM434 FRAM MEMORY CELL CONFIGURATION 6,028,783 2/22/2000 11/14/2017 Judith E. ALLEN, et al. FOR A 1T/1C FERROELECTRIC RAM434 FRAM MEMORY CELL CONFIGURATION 6,185,123 2/6/2001 11/14/2017 Judith E. ALLEN, et al. CON FOR A 1T/1C FERROELECTRIC RAM435 FRAM REFERENCE CELL 5,986,919 11/16/1999 11/14/2017 Dennis R. WILSON, et al. CONFIGURATION FOR A 1T/1C Page A-7 RAM435 FRAM REFRENCE CELL 6,252,793 6/26/2001 12/19/2019 Dennis R. WILSON, et al. CON CONFIGURATION FOR A 1T/1C RAM436 FRAM SENSE AMPLIFIER 5,969,980 10/19/1999 11/14/2017 Dennis R. WILSON, et al. CONFIGURATION FOR A 1T/1C RAM437 FRAM COLUMN RECODER 5,892,728 4/6/1999 11/14/2017 Dennis R. WILSON, et al. CONFIGURATION FOR A 1T/1C RAM438 FRAM SENSE AMPLIFIER LATCH 6,002,634 12/14/1999 11/14/2017 Dennis R. WILSON DRIVER CIRCUIT FOR A 1T/1C RAM439 FRAM PLATE LINE DRIVER CIRCUIT FOR 5,978,251 11/2/1999 11/14/2017 Donald J. VERHAEGHE, et al. A 1T/1C FERROELECTRIC RAM440 FRAM PLATE LINE SEGMENTATION IN A 5,995,406 11/30/1999 11/14/2017 Lark E. LEHMAN, et al. 1T/1C FERROELECTRIC MEMORY RAM 442 FRAM FERROELECTRIC THIN FILMS 6,203,608 3/20/2001 4/15/2018 Gakuji UOZUMI, et al. AND SOLUTIONS: COMPOSITIONS RAM 443 FRAM CMOS RC EQUIVALENT DELAY 6,097,231 8/1/2000 5/29/2018 Gary P. MOSCALUK CIRCUIT RAM 444 FRAM METHOD OF MANUFACTURING 6,174,735 1/16/2001 10/23/2018 Thomas A. EVANS FERROELECTRIC MEMORY RAM 444 9246 FERROELECTRIC MEMORY 6,201,726 3/13/2001 10/23/2018 Thomas A. EVANS DIV DEVICE STRUCTURE USEFUL RAM 444 FRAM FERROELECTRRIC MEMORY 6,358,755 3/19/2002 6/5/2020 Thomas A. EVANS DIV2 DEVICE STRUCTURE USEFUL RAM 445 2845 POLARIZATION METHOD FOR 6,238,933 5/29/2001 5/6/2019 Shan SUN, et al. MINIMIZING THE EFFECTS OF RAM 446 7286 HYDROGEN BARRIER 6,249,014 6/19/2001 10/1/2018 Richard A. BAILEY ENCAPSULATION TECHNIQUES Page A-8 RAM 447 EDRAM EMBEDDED ENHANCED DRAM 5,963,481 10/5/1999 6/30/2018 Michael ALWAIS, et al. AND ASSOCIATED METHOD RAM 448 4300 MULTI-BANK ESDRAM WITH 6,249,840 6/19/2001 10/23/2018 Michael PETERS CROSS-COUPLED SRAM CACHE RAM 450 9984 DOUBLE DATA RATE 6,330,636 12/11/2001 1/25/2019 David W. BONDURANT, et al. SYNCHRONOUS DYNAMIC RAM 451 FRAM CMOS PREFERRED STATE 6,060,919 5/9/2000 12/4/2018 Dennis R. WILSON, et al. POWER-UP LATCH RAM 452 FRAM INTEGRATED CIRCUIT MEMORY 6,249,841 6/19/2001 12/3/2018 Donald G. CARRIGAN, et al. DEVICE AND METHOD RAM 454 9582 BARRIER LAYER TO PROTECT A 6,242,299 6/5/2001 4/1/2019 George E. HICKERT FERROELECTRIC CAPACITOR RAM 456 FRAM FERROELECTRIC NON-VOLATILE 6,141,237 10/31/2000 7/12/2019 Jarrod ELIASON, et al. LATCH CIRCUITS RAM 460 EDRAM ENHANCED BUS TURNAROUND 6,151,236 11/21/2000 2/29/2020 Bruce GRIESHABER, et al. INTEGRATED CIRCUIT DYNAMIC RAM 460 EDRAM ENHANCED BUS TURNAROUND 6,301,183 10/9/2001 7/27/2020 Bruce GRIESHABER et al. CON INTEGRATED CIRCUIT DYNAMIC RAM 478 FRAM FERROELECTRIC VOLTAGE 6,275,425 8/14/2001 11/16/2020 Jarrod ELIASON BOOST CIRCUITS ----------------------------------------------------------------------------------------------------------------------- Netherlands 4 =================== RAM 302 FRAM SELF RESTORING 0278167 8/17/1994 12/31/2008 S. Sheffield EATON, Jr. NL FERROELECTRIC MEMORY RAM 314 FRAM MULTILAYER ELECTRODES FOR 0404295 6/4/1997 3/21/2010 William LARSON NL INTEGRATED CIRCUIT RAM 336 FRAM SERIES FERROELECTIC 0546325 8/30/2000 11/6/2012 Constance DeSMITH, et. al. NL CAPACITOR STRUCTURE FOR RAM 357 FRAM FERROELECTRIC MEMORY 0503077 4/8/1997 9/26/2011 Kazuhiro TAKENAKA NL DEVICE WITH CAPACITOR ---------------------------------------------------------------------------------------------------------------------- Japan 26 ================== RAM 302 FRAM SELF RESTORING 2,674,775 5/30/1997 2/12/2008 S. Sheffield EATON, Jr. JPN FERROELECTRIC MEMORY RAM 303 FRAM MEMORY CELL WITH VOLATILE 2,693,967 9/5/1997 7/1/2008 Klaus DIMMLER, et. al. JPN AND NON-VOLATILE PORTIONS Page A-9 RAM 305 DRAM DATA STORAGE DEVICE AND 2736072 1/9/1998 7/1/2008 Michael C. PARRIS, et. al. JPN METHOD OF USING A RAM 309 FRAM FERROELECTRIC RETENTION 2,771,551 4/17/1998 10/5/2008 Douglas B. BUTLER, et. al. JPN METHOD RAM FRAM NON-VOLATILE MEMORY CELL 2,004,044 4/12/1998 9/12/2008 Kenneth J. MOBLEY 311/312 JPN AND SENSING METHOD RAM 314 FRAM MULTILAYER ELECTRODES FOR 2825606 9/11/1998 6/20/2018 William LARSON JPN INTEGRATED CIRCUIT RAM 316 FRAM INTEGRATED FERROELECTRIC 2,918,284 4/23/1999 4/23/2018 Alfred P. GNADINGER, et. al. JPN CIRCUIT RAM 317 DRAM METHOD FOR CREATING SELF- 2673615 7/18/1997 7/30/2011 Douglas B. BUTLER JPN ALIGNED, NON-PATTERNED RAM 319 DRAM REACTION BARRIER FOR A 2075540 7/25/1996 7/13/2010 E. Henry STEVENS, et. al. JPN MULTILAYER STRUCTURE IN AN RAM 320 DRAM TRENCH CAPACITOR FOR LARGE 2089169 9/2/1996 6/21/2011 Douglas B. BUTLER JPN SCALE INTEGRATED MEMORY RAM 322 DRAM SEALED SELF ALIGNED 2,005,865 3/29/1995 4/5/2011 Douglas B. BUTLER JPN CONTACTS USING TWO NITRIDES RAM 324 DRAM CURRENT SUPPLY CIRCUIT FOR 2,932,122 5/28/1999 1/23/2012 Kenneth J. MOBLEY, et. al. JPN DRIVING HIGH CAPACITANCE RAM 325 DRAM REFERENCE GENERATOR FOR 3106216 9/8/2000 1/23/2012 S. Sheffield EATON, Jr. JPN AN INTEGRATED CIRCUIT RAM 326 DRAM OUTPUT CONTROL CIRCUIT 3136424 12/8/2000 1/22/2012 S. Sheffield EATON, Jr. JPN HAVING CONTINUOUSLY RAM 335 FRAM STRUCTURE OF HIGH 3162512 2/23/2001 11/4/2012 George ARGOS, Jr., et. al. JPN DIELECTRIC CONSTANT RAM 342 FRAM STRUCTURE AND FABRICATION 2,065,956 6/24/1996 11/4/2012 George ARGOS, Jr. et al. JPN OF HIGH TRANSCONDUCTANCE RAM 343 EDRAM EDRAM HAVING A DYNAMICALLY- 2851503 11/13/1998 1/21/2013 Donald G. CARRIGAN, et. al. JPN SIZED CACHE MEMORY AND RAM 360 FRAM NON-VOLATILE FERROELECTRIC 3174209 3/30/2001 11/12/2013 William LARSON JPN MEMORY WITH FOLDED BIT RAM 370 FRAM FERROELECTRIC MEMORY 3238068 10/5/2001 4/12/2016 Dennis R. WILSON, et al. JPN SENSING SCHEME USING BIT Page A-10 RAM 371 FRAM VOLTAGE REFERENCE FOR A 2987316 10/1/1999 9/14/2015 Dennis R. WILSON, et al. JPN FERROELECTRIC 1T/1C BASED RAM 374 FRAM FERROELECTRIC CAPACITOR 3039760 3/3/2000 2/17/2015 Sanjay MITRA, et. al. JPN RENEWAL METHOD RAM 380 FRAM SYSTEM AND METHOD FOR 2943847 6/25/1999 3/20/2015 Jeffrey E. DOWNS, et. al. JPN WRITE-PROTECTING RAM 382 FRAM FERROELECTRIC MEMORY 3200009 6/15/2001 3/29/2016 Manooch GOLABI, et al. JPN SENSING METHOD USING RAM 412 FRAM LOW-POWER, NON-RESETABLE 2977083 9/10/1999 2/13/2018 Donald J. VERHAEGHE, et al. JPN TEST MODE CIRCUIT RAM 413 FRAM SYSTEM AND METHOD FOR 2979513 9/17/1999 2/19/2018 Donald J. VERHAEGHE, et al. JPN CONTROLLING INTERNAL TEST RAM 415 FRAM DUAL-LEVEL METALIZATION 2962475 8/6/1999 5/11/2018 George ARGOS, Jr., et al. JPN METHOD FOR INTEGRATED ----------------------------------------------------------------------------------------------------------------------- Italy 4 =================== RAM 302 FRAM SELF RESTORING 0278167 8/17/1994 12/31/2008 S. Sheffield EATON, Jr. IT FERROELECTRIC MEMORY RAM 314 FRAM MULTILAYER ELECTRODES FOR 0404295 6/4/1997 3/21/2010 William LARSON IT INTEGRATED CIRCUIT RAM 336 FRAM SERIES FERROELECTRIC 0546325 8/30/2000 11/6/2012 Constance DeSMITH, et al. IT CAPACITOR STRUCTURE FOR RAM 357 FRAM FERROELECTRIC MEMORY 0503077 4/8/1997 9/26/2011 Kazuhiro TAKENAKA IT DEVICE WITH CAPACITOR ----------------------------------------------------------------------------------------------------------------------- Germany 24 =================== RAM 302 FRAM SELF RESTORING P3751171.8 8/17/1994 12/31/2008 S. Sheffield EATON, Jr. DE FERROELECTRIC MEMORY RAM 303 FRAM FERROELECTRIC SHADOW RAM P3886600.5 12/29/1993 6/22/2008 Klaus DIMMLER, et. al. DE RAM 303 FRAM FERROELECTRIC SHADOW RAM P3855877.7 12/29/1993 7/2/2007 Klaus DIMMLER, et. al. DE DIV RAM 305 DRAM DATA STORAGE DEVICE AND DE 3886 112 12/8/1993 6/22/2008 Michael E. PARRIS, et al. DE METHOD OF USING A RAM 309 FRAM FERROELECTRIC RETENTION P 3887130.0- 5/19/1994 9/21/2008 Douglas B. BUTLER et al. DE METHOD Page A-11 RAM FRAM NON-VOLATILE MEMORY CELL P 68919393.9 11/17/1994 8/15/2009 Kenneth J. MOBLEY 311/312 DE AND SENSING METHOD RAM 314 FRAM MULTILAYER ELECTRODES FOR 69030843.4-0 6/4/1997 3/21/2010 William LARSON DE INTEGRATED CIRCUIT RAM 330 FRAM CONDUCTING ELECTRODE 69203395.5 7/12/1995 5/26/2012 Lee KAMMERDINER, et. al. DE LAYERS FOR FERROELECTRIC RAM 335 FRAM STRUCTURE OF HIGH 69201713.5 3/15/1995 10/28/2012 George ARGOS, Jr., et al. DE DIELECTRIC CONSTANT RAM 336 FRAM SERIES FERROELECTRIC 0546325 8/30/2000 11/6/2012 Constance DeSMITH, et al. DE CAPACITOR STRUCTURE FOR RAM 338 FRAM SEMICONDUCTOR DEVICE WITH 69123 422.1- 12/4/1996 4/23/2011 Kazuhiro TAKENAKA DE FERROELECTRIC AND METHOD RAM 340 FRAM METHOD OF MANUFACTURING 69123557.0 6/7/1993 5/31/2011 Koji KATO DE SEMICONDUCTOR DEVICE USING RAM 343 EDRAM EDRAM WITH EMBEDDED 69324508.5 4/21/1999 1/14/2013 Donald G. CARRIGAN, et al. DE REGISTERS RAM 348 FRAM SEMICONDUCTOR DEVICE 69111413.7 7/19/1995 7/24/2011 Koji KATO DE HAVING A FERROELECTRIC FILM RAM 352 FRAM SEMICONDUCTOR DEVICE 69124994.6-0 6/5/1997 8/20/2011 Akira FUJISAWA, et al. DE HAVING A TRANSISTOR, A RAM 357 FRAM FERROELECTRIC MEMORY 69124086.8-0 4/8/1997 9/26/2011 Kazuhiro TAKENAKA DE DEVICE WITH CAPACITOR RAM 358 FRAM SEMICONDUCTOR DEVICE WITH 69132627.4-0 6/6/2001 9/26/2011 Kazuhiro TAKENAKA DE A CONDUCTIVE REACTION- RAM 360 FRAM NON-VOLATILE FERROELECTRIC 69313785.1 9/10/1997 11/16/2013 William LARSON DE MEMORY WITH FOLDED BIT RAM 365 FRAM FERROELECTRIC-BASED RAM 69426903.4-0 3/21/2001 4/13/2014 Harold Brett MEADOWS, et al. DE SENSING SCHEME INCLUDING RAM 370 FRAM FERROELECTRIC MEMORY 69612783.0 5/16/2001 3/12/2016 Dennis R. WILSON, et al. DE SENSING SCHEME USING BIT RAM 371 FRAM VOLTAGE REFERENCE FOR A 69522629.0-0 9/12/2001 7/18/2015 Dennis R. WILSON, et al. DE FERROELECTRIC 1T/1C BASED Page A-12 RAM 379 FRAM PASSIVATION METHOD AND 69413665 9/30/1998 12/9/2014 George ARGOS, Jr., et al. DE STRUCTURE FOR A RAM 380 FRAM SYSTEM AND METHOD FOR 0674318 7/1/2000 12/9/2014 Jeffrey E. DOWNS, et. al DE WRITE-PROTECTING RAM 384 FRAM CIRCUIT AND METHOD FOR 69613424.1-0 6/20/2001 4/10/2016 Donald J. VERHAEGHE, et al. DE REDUCING A COMPENSATION OF ----------------------------------------------------------------------------------------------------------------------- Great Britain 24 =================== RAM 302 FRAM SELF RESTORING 0278167 8/17/1994 12/31/2008 S. Sheffield EATON, Jr. UK FERROELECTRIC MEMORY RAM 303 FRAM FERROELECTRIC SHADOW RAM 0297777 12/29/1993 6/22/2008 Klaus DIMMLER, et al. GB RAM 303 FRAM FERROELECTRIC SHADOW RAM 0530928 12/29/1993 7/2/2007 Klaus DIMMLER, et al. GB DIV RAM 305 DRAM DATA STORAGE DEVICE AND 0299633 12/8/1993 6/22/2008 Michael C. PARRIS, et al. GB METHOD OF USING A RAM 309 FRAM FERROELECTRIC RETENTION 0338158 1/12/1994 9/21/2008 Douglas B. BUTLER, et al. GB METHOD RAM FRAM NON-VOLATILE MEMORY CELL 0359404 11/17/1994 8/15/2009 Kenneth J. MOBLEY 311/312 GB AND SENSING METHOD RAM 314 FRAM MULTILAYER ELECTRODES FOR 0404295 6/14/1997 3/21/2010 William LARSON GB INTEGRATED CIRCUIT RAM 330 FRAM CONDUCTING ELECTRODE 0518117 7/12/1995 5/26/2012 Lee KAMMERDINER, et al. GB LAYERS FOR FERROELECTRIC RAM 335 FRAM STRUCTURE OF HIGH 0540994 3/15/1995 10/28/2012 George ARGOS, Jr., et al. GB DIELECTRIC CONSTANT RAM 336 FRAM SERIES FERROELECTRIC 0546325 8/30/2000 11/6/2012 Constance DeSMITH, et al. UK CAPACITOR STRUCTURE FOR RAM 338 FRAM SEMICONDUCTOR DEVICE WITH 0478799 12/4/1996 4/23/2011 Kazuhiro TAKENAKA GB FERROELECTRIC AND METHOD RAM 340 FRAM METHOD OF MANUFACTURING 0487739 6/7/1993 5/31/2011 Koji KATO GB SEMICONDUCTOR DEVICE USING RAM 348 FRAM SEMICONDUCTOR DEVICE 0497982 7/19/1995 7/24/2011 Koji KATO GB HAVING A FERROELECTRIC FILM Page A-13 RAM 352 FRAM SEMICONDUCTOR DEVICE 0514547 6/5/1997 8/20/2011 Akira FUJISAWA, et al. GB HAVING A TRANSISTOR, A RAM 357 FRAM FERROELECTRIC MEMORY 0503077 4/8/1997 9/26/2011 Kazuhiro TAKENAKA GB DEVICE WITH CAPACITOR RAM 358 FRAM SEMICONDUCTOR DEVICE WITH 0503078 6/6/2001 9/26/2011 Kazuhiro TAKENAKA GB A CONDUCTIVE REACTION- RAM 360 FRAM NON-VOLATILE FERROELECTRIC 0598596 9/10/1997 11/16/2013 William LARSON GB MEMORY WITH FOLDED BIT RAM 365 FRAM FERROELECTRIC-BASED RAM 0631287 3/21/2001 4/13/2014 Harold Brett MEADOWS, et al. GB SENSING SCHEME INCLUDING RAM 370 FRAM FERROELECRIC MEMORY 0737982 5/16/2001 3/12/2016 Dennis R. WILSON, et. al. GB SENSING SCHEME USING BIT RAM 371 FRAM VOLTAGE REFERENCE FOR A 0702372 9/12/2001 7/18/2015 Dennis R. WILSON, et al. GB FERROELECTRIC 1T/1C BASED RAM 379 FRAM PASSIVATION METHOD AND 0671765 9/30/1998 12/9/2014 George ARGOS, Jr., et al. GB STRUCTURE FOR A RAM 380 FRAM SYSTEM AND METHOD FOR 0674318 7/1/2000 12/9/2014 Jeffrey E. DOWNS, et al. UK WRITE-PROTECTING RAM 382 FRAM FERROELECTRIC MEMORY 0735541 6/13/2001 3/12/2016 Manooch GOLABI, et al. GB SENSING METHOD USING RAM 384 FRAM CIRCUIT AND METHOD FOR 0737983 6/20/2001 4/10/2016 Donald J. VERHAEGHE, et al. GB REDUCING A COMPENSATION OF ----------------------------------------------------------------------------------------------------------------------- France 6 =================== RAM 302 FRAM SELF RESTORING 0278167 8/17/1994 2/31/2007 S. Sheffield EATON, Jr. FR FERROELECTRIC MEMORY RAM 314 FRAM MULTILAYER ELECTRODES FOR 0404295 6/4/1997 3/21/2010 William LARSON FR INTEGRATED CIRCUIT RAM 336 FRAM SERIES FERROELECTRIC 0546325 8/30/2000 11/6/2012 Constance DeSMITH, et al. FR CAPACITOR STRUCTURE FOR RAM 357 FRAM FERROELECTRIC MEMORY 0503077 4/8/1997 9/26/2011 Kazuhiro TAKENAKA FR DEVICE WITH CAPACITOR RAM 379 FRAM PASSIVATION METHOD AND 0671765 9/30/1998 12/9/2014 George ARGOS, Jr., et al. FR STRUCTURE FOR A Page A-14 RAM 380 FRAM SYSTEM AND METHOD FOR 0674318 7/1/2000 12/9/2014 Jeffrey E. DOWNS, et al. FR WRITE-PROTECTING ----------------------------------------------------------------------------------------------------------------------- Australia 1 =================== RAM 302 FRAM SELF RESTORING 581820 6/9/1989 9/7/2007 S. Sheffield EATON, Jr. AUS FERROELECTRIC MEMORY
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